According to the People's Daily Online released by the China United Front News network and the Communist Party of China News Network launched the "2020 National Two sessions of the democratic parties proposal selection" report shows that the central committee of the People's Republic of China plans to submit a "proposal on promoting the scientific development of China's power semiconductor industry".
The proposal points out that with the continuous emergence of new applications in the fields of industry, automobile, wireless communication and consumer electronics and the increasingly urgent need for energy conservation and emission reduction, power semiconductor in our country has a huge market demand, which is easy to generate new industry and new technology. With good national policies, power semiconductor will become the best breakthrough point for "China core". Therefore, it is suggested to further improve the development policy of power semiconductor industry, vigorously support the technology of silicon power semiconductor chips, and establish projects to support the design and manufacturing process technology of silicon power semiconductor materials, chips and devices. After many years of layout and development, we have a certain technical foundation and precipitation in silicon IGBT chip technology. We can focus on breaking through 6 generation silicon power chip product design and batch manufacturing technology, and adopt the development strategy of easy first and difficult then to solve the problem of "whether or not", so as to realize the independent supply of power semiconductor chips as soon as possible.
To this end, the Central Committee suggested:
I. Further improve the development policies of the power semiconductor industry, vigorously support the technology breakthrough of silicon power semiconductor chips, and establish projects to support the design and manufacturing process technology of silicon power semiconductor materials, chips and devices. After many years of layout and development, we have a certain technical foundation and precipitation in silicon IGBT chip technology. We can focus on breaking through 6 generation silicon power chip product design and batch manufacturing technology, and adopt the development strategy of easy first and difficult then to solve the problem of "whether or not", so as to realize the independent supply of power semiconductor chips as soon as possible.
Second, strengthen the new material science and technology. Big data transmission, cloud computing, AI technology, the Internet of Things, including the next step of energy transmission, have put forward higher and higher requirements for network transmission speed and capacity, and the market demand for high-power chips is very large. According to the development trend of the industry, silicon carbide, gallium nitride and other new materials have obvious advantages in the application of power semiconductor, and are the core technology direction of the next generation of power semiconductor.
At present, the silicon carbide and gallium nitride market is in its infancy, and the gap between domestic manufacturers and overseas traditional giants is small. Domestic enterprises are expected to realize corner overtaking in the local market application.
First, the research and development of new power semiconductor materials should be included in the national plan and fully deployed to seize the strategic commanding heights.
The second is to guide the enterprise to actively meet the future application demand, forward-looking layout. Promote leading power semiconductor enterprises to focus on overcoming a number of key technologies and application technology problems in industrial development, and seize the opportunity in international competition;
Third, we should avoid over-hyping new concepts. From discovering the potential of new materials to industrialization, we need to establish an efficient industry-university-research system and create a more open and inclusive investment environment.
Third, cautiously support the acquisition of foreign power semiconductor enterprises. It is difficult to fully learn and master international advanced power semiconductor chip design and manufacturing technology through acquisition, and there is a danger that products manufactured by overseas factories cannot be exported to China.
The article is from People's Daily Online.
